In situ etch treatment of bulk surface for epitaxial layer growth optimization
نویسندگان
چکیده
Homoepitaxial bulk 4H SiC-off-axis commercial wafers were investigated after in situ hydrogen etching on a hot wall chemical vapor deposition (HWCVD).We have performed test etching on several process conditions in order to study the surface defects reduction or transformation. A detailed map of bulk defects has been obtained by optical microscopy inspection to mark interesting position of investigated area and to identify the same area after chemical etching, with the aim to compare the defect evolution after hydrogen etching in the reactor. The highlighted defects area was analysed by means of atomic force microscopy and Micro Raman spectroscopy in order to obtain morphological and structural information. On the etched surface bulk wafer a epilayer was grown by HWCVD reactor to study the development of marked defects. The etched surfaces show a significant defect density reduction and present a good surface morphology. 2005 Elsevier B.V. All rights reserved.
منابع مشابه
Chlorine Etching For In-Situ Low-Temperature Silicon Surface Cleaning For Epitaxy Applications
Chlorine in a nitrogen ambient is used to clean silicon surfaces of impurities by etching a thin layer from the surface prior to silicon epitaxial growth. Silicon etch rates of 1-10 nm/min could be achieved for temperatures from 525C to 575C. The etching of a thin layer of silicon from the surface is also capable of removing phosphorus from the surface, which conventionally is difficult to remo...
متن کاملSuppression of 3C-Inclusion Formation during Growth of 4H-SiC Si-Face Homoepitaxial Layers with a 1° Off-Angle
We grew epitaxial layers on 4H-silicon carbide (SiC) Si-face substrates with a 1° off-angle. The suppression of 3C-inclusion formation during growth at a high C/Si ratio was investigated, because a growth technique with a high C/Si ratio is needed to decrease residual nitrogen incorporation. 3C inclusions were generated both at the interface between the substrate and epitaxial layer, and during...
متن کاملElectrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures.
Suspended crystalline Ge semiconductor structures are created on a Si(001) substrate by a combination of epitaxial growth and simple patterning from the front surface using anisotropic underetching. Geometric definition of the surface Ge layer gives access to a range of crystalline planes that have different etch resistance. The structures are aligned to avoid etch-resistive planes in making th...
متن کاملGrowth of epitaxial iron nitride ultrathin film on zinc-blende gallium nitride
The authors report the growth of iron nitride on zinc-blende gallium nitride using molecular beam epitaxy. First, zinc-blende GaN is grown on a magnesium oxide substrate having 001 orientation; second, an ultrathin layer of FeN is grown on top of the GaN layer. In situ reflection high-energy electron diffraction is used to monitor the surface during growth, and a well-defined epitaxial relation...
متن کاملIn-situ optical reflectance and synchrotron X-ray topography study of defects in epitaxial dilute GaAsN on GaAs
In order to investigate the possibilities of in-situ monitoring of GaAsN bulk layer growth and the crystal quality concerning the formation of misfit dislocations, GaAsN bulk samples with different layer thicknesses were grown using a metal-organic vapor phase epitaxy system equipped with a normal incidence optical reflectance setup. High-resolution X-ray diffractometry and synchrotron radiatio...
متن کامل